Efficiency enhancement for SiN-based light emitting device through introduction of Si nanocones in emitting layer
نویسندگان
چکیده
منابع مشابه
Influences of Device Architectures on Characteristics of Organic Light-Emitting Devices Incorporating Ambipolar Blue-Emitting Ter(9,9-diarylfluorenes)
In this article, we report the studies of various device architectures of organic lightemitting devices (OLEDs) incorporating highly efficient blue-emitting and ambipolar carriertransport ter(9,9-diarylfluorene)s, and their influences on device characteristics. The device structures investigated include single-layer devices and multilayer heterostructure devices employing the terfluorene as one...
متن کاملEnhancement in Light Extraction Efficiency of GaN-Based Light-Emitting Diodes Using Double Dielectric Surface Passivation
SiO2/Al2O3 double dielectric stack layer was deposited on the surface of the GaN-based Light-Emitting Diode (LED). The double dielectric stack layer enhances both the electrical characteristics and the optical output power of the LED because the first Al2O3 layer plays a role of effectively passivating the p-GaN surface and the second lower index SiO2 layer increases the critical angle of the l...
متن کاملLarge enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures
Light extraction efficiency (LEE) of AlGaN-based nanorod deep ultraviolet (UV) light-emitting diodes (LEDs) is numerically investigated using three-dimensional finite-difference time-domain simulations. LEE of deep UV LEDs is limited by strong light absorption in the p-GaN contact layer and total internal reflection. The nanorod structure is found to be quite effective in increasing LEE of deep...
متن کاملHigh efficiency green phosphorescent top-emitting organic light-emitting diode with ultrathin non-doped emissive layer
Ultrathin non-doped emissive layer (EML) has been employed in green phosphorescent top-emitting organic light-emitting diodes (TOLEDs) to take full advantages of the cavity standing wave condition in a microcavity structure. Much higher out-coupling efficiency has been observed compared to conventional doped EML with relatively wide emission zone. A further investigation on dual ultrathin non-d...
متن کاملOrigin of efficiency droop in GaN-based light-emitting diodes
The efficiency droop in GaInN/GaN multiple-quantum well MQW light-emitting diodes is investigated. Measurements show that the efficiency droop, occurring under high injection conditions, is unrelated to junction temperature. Furthermore, the photoluminescence output as a function of excitation power shows no droop, indicating that the droop is not related to MQW efficiency but rather to the rec...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Optical Materials Express
سال: 2015
ISSN: 2159-3930
DOI: 10.1364/ome.5.000969